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Bipolar (BJT) Transistor PNP 35 V 150 mA - 150 mW Through Hole TO-5
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-5 | |
Series | - | |
Package / Case | TO-205AA, TO-5-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 24mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 5µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 35 V | |
Current - Collector (Ic) (Max) | 150 mA | |
Transistor Type | PNP | |
Power - Max | 150 mW | |
Other Names | 2368-2N404A |
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