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Bipolar (BJT) Transistor PNP 1 A - 650 mW Through Hole TO-1
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | 90°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-1 | |
Series | - | |
Package / Case | TO-1-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 69 @ 300mA, 0V | |
Vce Saturation (Max) @ Ib, Ic | 170mV @ 50mA, 500mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 25µA (ICBO) | |
Current - Collector (Ic) (Max) | 1 A | |
Transistor Type | PNP | |
Power - Max | 650 mW | |
Other Names | 2368-NTE102A |
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