SIS412DN-T1-GE3

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MOSFET N-CH 30V 12A PPAK1212-8

NOVA Part#:

312-2280958-SIS412DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SIS412DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 30 V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SIS412
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 15 V
Power Dissipation (Max)	3.2W (Ta), 15.6W (Tc)
Other Names	SIS412DN-T1-GE3CT SIS412DN-T1-GE3DKR SIS412DNT1GE3 SIS412DN-T1-GE3TR