SI7617DN-T1-GE3

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MOSFET P-CH 30V 35A PPAK1212-8

NOVA Part#:

312-2282260-SI7617DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SI7617DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

Altium

Eagle

OrCad

PADS

KiCad

P-Channel 30 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SI7617
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±25V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 15 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Other Names	SI7617DNT1GE3 SI7617DN-T1-GE3CT SI7617DN-T1-GE3DKR SI7617DN-T1-GE3TR