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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2353065-APT15GP90BG
IGBT 900V 43A 250W TO247
Microsemi Corporation
310-2353066-APT15GT60KRG
IGBT 600V 42A 184W TO220
Microsemi Corporation
310-2353067-APT15GP90KG
IGBT 900V 43A 250W TO220
Microsemi Corporation
310-2353068-FGH40T100SMD
IGBT 1000V 80A 333W TO247-3
onsemi
310-2353070-APT20GF120BRDQ1G
IGBT 1200V 36A 200W TO247
Microsemi Corporation
310-2353071-APT25GP120BDQ1G
IGBT 1200V 69A 417W TO247
Microchip Technology
310-2353072-APT20GF120BRG
IGBT 1200V 32A 200W TO247
Microsemi Corporation
310-2353073-APT25GP90BDQ1G
IGBT 900V 72A 417W TO247
Microchip Technology
310-2353074-APT25GP120BG
IGBT 1200V 69A 417W TO247
Microchip Technology
310-2353183-NGB8245NT4G
IGBT 490V 20A 150W D2PAK3
Littelfuse Inc.
310-2353184-AUIRGR4045DTRL
IGBT 600V 12A 77W DPAK
Infineon Technologies
310-2353185-NGD18N40ACLBT4G
IGBT 430V 15A 115W DPAK-3
Littelfuse Inc.
310-2353186-NGTB25N120IHLWG
IGBT 1200V 50A TO247
onsemi
310-2353187-NGTB20N120IHLWG
IGBT 1200V 40A 192W TO247-3
onsemi
310-2353188-STGW60H65DF
IGBT 650V 120A 360W TO247
STMicroelectronics
310-2353189-NGTB15N120LWG
IGBT 1200V 30A 156W TO247-3
onsemi
310-2353190-APT11GF120KRG
IGBT 1200V 25A 156W TO220
Microsemi Corporation
310-2353192-AUIRGPS4067D1
IGBT 600V 240A 750W TO-274
Infineon Technologies
310-2353193-NGD8205NT4
IGBT 390V 20A 125W DPAK
onsemi
310-2353194-NGB8204NT4
IGBT 430V 18A 115W D2PAK
onsemi