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IGBT PT 1200 V 69 A 417 W Through Hole TO-247 [B]
Category | Transistors - IGBTs - Single | |
Manufacturer | Microchip Technology | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 [B] | |
Base Product Number | APT25GP120 | |
Input Type | Standard | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 69 A | |
Series | POWER MOS 7® | |
IGBT Type | PT | |
Current - Collector Pulsed (Icm) | 90 A | |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A | |
Switching Energy | 500µJ (on), 440µJ (off) | |
Gate Charge | 110 nC | |
Td (on/off) @ 25°C | 12ns/70ns | |
Package / Case | TO-247-3 | |
Power - Max | 417 W | |
Test Condition | 600V, 25A, 5Ohm, 15V | |
Other Names | APT25GP120BDQ1GMI APT25GP120BDQ1GMI-ND APT25GP120BDQ1GQ |
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