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APT70GR65B2SCD30
INSULATED GATE BIPOLAR TRANSISTO
NOVA Part#:
310-2356898-APT70GR65B2SCD30
Manufacturer:
Manufacturer Part No:
APT70GR65B2SCD30
Standard Package:
1
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IGBT NPT 650 V 134 A 595 W Through Hole T-MAX™ [B2]
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Microsemi Corporation | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | T-MAX™ [B2] | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Current - Collector (Ic) (Max) | 134 A | |
| Series | - | |
| IGBT Type | NPT | |
| Current - Collector Pulsed (Icm) | 260 A | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A | |
| Gate Charge | 305 nC | |
| Td (on/off) @ 25°C | 19ns/170ns | |
| Package / Case | TO-247-3 | |
| Power - Max | 595 W | |
| Test Condition | 433V, 70A, 4.3Ohm, 15V | |
| Other Names | APT70GR65B2SCD30-ND 150-APT70GR65B2SCD30 |
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