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IGBT Module - Half Bridge 1200 V 360 A 1136 W Chassis Mount Double INT-A-PAK
Category | Transistors - IGBTs - Modules | |
Manufacturer | Vishay General Semiconductor - Diodes Division | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | Double INT-A-PAK | |
Base Product Number | GB200 | |
Input | Standard | |
Configuration | Half Bridge | |
Series | - | |
Current - Collector Cutoff (Max) | 5 mA | |
Input Capacitance (Cies) @ Vce | 14.9 nF @ 25 V | |
NTC Thermistor | No | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 360 A | |
Package / Case | Double INT-A-PAK (3 + 4) | |
IGBT Type | - | |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A | |
Power - Max | 1136 W | |
Other Names | VSGB200TH120N |
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