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IGBT Module Trench Field Stop Half Bridge 1200 V 75 A 270 W Chassis Mount D1
Category | Transistors - IGBTs - Modules | |
Manufacturer | Microsemi Corporation | |
RoHS | 1 | |
Operating Temperature | - | |
Mounting Type | Chassis Mount | |
Supplier Device Package | D1 | |
Input | Standard | |
Configuration | Half Bridge | |
Series | - | |
Current - Collector Cutoff (Max) | 5 mA | |
Input Capacitance (Cies) @ Vce | 3.6 nF @ 25 V | |
NTC Thermistor | No | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 75 A | |
Package / Case | D1 | |
IGBT Type | Trench Field Stop | |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | |
Power - Max | 270 W | |
Other Names | 150-APTGT50A120D1G APTGT50A120D1G-ND |
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