EPC2012

GANFET N-CH 200V 3A DIE
NOVA Part#:
312-2314083-EPC2012
Manufacturer:
Manufacturer Part No:
EPC2012
Standard Package:
1,000
Technical Datasheet:

Available download format

N-Channel 200 V 3A (Ta) - Surface Mount Die

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerEPC
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Die
TechnologyGaNFET (Gallium Nitride)
SerieseGaN®
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 5 V
FET Feature-
Package / CaseDie
Vgs (Max)+6V, -5V
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 100 V
Power Dissipation (Max) -
Other Names917-1017-1
917-1017-6
-917-1017-1
917-1017-2
-917-1017-2

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