SI1401EDH-T1-GE3

MOSFET P-CH 12V 4A SC70-6
NOVA Part#:
312-2285048-SI1401EDH-T1-GE3
Manufacturer:
Manufacturer Part No:
SI1401EDH-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 12 V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package SC-70-6
Base Product Number SI1401
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 8 V
FET Feature-
Package / Case6-TSSOP, SC-88, SOT-363
Vgs (Max)±10V
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
Other NamesSI1401EDH-T1-GE3DKR
SI1401EDH-T1-GE3TR
SI1401EDHT1GE3
SI1401EDH-T1-GE3CT

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