SQP120N10-09_GE3

MOSFET N-CH 100V 120A TO220AB
NOVA Part#:
312-2305745-SQP120N10-09_GE3
Manufacturer:
Manufacturer Part No:
SQP120N10-09_GE3
Standard Package:
500
Technical Datasheet:

Available download format

N-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number SQP120
TechnologyMOSFET (Metal Oxide)
SeriesAutomotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds 8645 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Other NamesSQP120N10-09_GE3TRINACTIVE
SQP120N10-09_GE3CT-ND
SQP120N10-09_GE3DKR-ND
SQP120N10-09_GE3CT
SQP120N10-09_GE3TR
SQP120N10-09_GE3DKR
SQP120N10-09_GE3DKRINACTIVE
SQP120N10-09_GE3TR-ND

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