SI7898DP-T1-E3

MOSFET N-CH 150V 3A PPAK SO-8
NOVA Part#:
312-2282858-SI7898DP-T1-E3
Manufacturer:
Manufacturer Part No:
SI7898DP-T1-E3
Standard Package:
3,000
Technical Datasheet:

Available download format

N-Channel 150 V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® SO-8
Base Product Number SI7898
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
FET Feature-
Package / CasePowerPAK® SO-8
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Power Dissipation (Max) 1.9W (Ta)
Other NamesSI7898DP-T1-E3DKR
SI7898DP-T1-E3CT
SI7898DPT1E3
SI7898DP-T1-E3TR

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