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N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 175°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
Base Product Number | TPN1R603 | |
Technology | MOSFET (Metal Oxide) | |
Series | U-MOSIX-H | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 300µA | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
FET Feature | - | |
Package / Case | 8-PowerVDFN | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 30 V | |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V | |
Power Dissipation (Max) | 104W (Tc) | |
Other Names | TPN1R603PLL1QDKR TPN1R603PL,L1Q(M TPN1R603PLL1QCT TPN1R603PLL1QTR TPN1R603PLL1Q |
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