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P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Microchip Technology | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | VP3203 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 650mA (Tj) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 10mA | |
FET Feature | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Vgs (Max) | ±20V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 30 V | |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | |
Power Dissipation (Max) | 740mW (Ta) |
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