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N-Channel 200 V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Rohm Semiconductor | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | CPT3 | |
Base Product Number | RND030 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 870mOhm @ 1.5A, 10V | |
Vgs(th) (Max) @ Id | 5.2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Vgs (Max) | ±30V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 200 V | |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V | |
Power Dissipation (Max) | 850mW (Ta), 20W (Tc) | |
Other Names | 846-RND030N20TLTR RND030N20TLDKR RND030N20TLTR RND030N20TLCT |
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