SI8851EDB-T2-E1

MOSFET P-CH 20V PWR MICRO FOOT
NOVA Part#:
312-2285450-SI8851EDB-T2-E1
Manufacturer:
Manufacturer Part No:
SI8851EDB-T2-E1
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 20 V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Power Micro Foot® (2.4x2)
Base Product Number SI8851
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
FET Feature-
Package / Case30-XFBGA
Vgs (Max)±8V
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 10 V
Power Dissipation (Max) 660mW (Ta)
Other NamesSI8851EDB-T2-E1CT
SI8851EDB-T2-E1TR
SI8851EDB-T2-E1DKR

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