IPD12CN10NGATMA1

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MOSFET N-CH 100V 67A TO252-3

NOVA Part#:

312-2291956-IPD12CN10NGATMA1

Manufacturer:

Manufacturer Part No:

IPD12CN10NGATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Base Product Number	IPD12CN10
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	4320 pF @ 50 V
Power Dissipation (Max)	125W (Tc)
Other Names	SP001127806 IPD12CN10NGATMA1CT IPD12CN10NGATMA1-ND IPD12CN10NGATMA1DKR IPD12CN10NGATMA1TR