IPB60R060P7ATMA1

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MOSFET N-CH 650V 48A D2PAK

NOVA Part#:

312-2283518-IPB60R060P7ATMA1

Manufacturer:

Manufacturer Part No:

IPB60R060P7ATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

N-Channel 650 V 48A (Tc) 164W (Tc) Surface Mount PG-TO263-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB60R060
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ P7
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id	4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	2895 pF @ 400 V
Power Dissipation (Max)	164W (Tc)
Other Names	IPB60R060P7 IPB60R060P7ATMA1DKR IPB60R060P7ATMA1-ND IPB60R060P7ATMA1TR IPB60R060P7ATMA1CT SP001664882