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SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
NOVA Part#:
312-2277607-SPB11N60C3ATMA1
Manufacturer:
Manufacturer Part No:
SPB11N60C3ATMA1
Standard Package:
1,000
Technical Datasheet:
Available download format
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N-Channel 650 V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Base Product Number | SPB11N60 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA | |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Other Names | SPB11N60C3 SPB11N60C3ATMA1TR SPB11N60C3INDKR SPB11N60C3XTINTR-ND SPB11N60C3XTINTR SPB11N60C3ATMA1DKR SPB11N60C3INDKR-ND SPB11N60C3XT SPB11N60C3INCT-NDR SPB11N60C3INCT SPB11N60C3INTR SPB11N60C3XTINCT-ND SPB11N60C3INTR-NDR SPB11N60C3ATMA1CT SP000013519 SPB11N60C3INCT-ND SPB11N60C3XTINCT SPB11N60C3INTR-ND |
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