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CSD25213W10
MOSFET P-CH 20V 1.6A 4DSBGA
NOVA Part#:
312-2264886-CSD25213W10
Manufacturer:
Manufacturer Part No:
CSD25213W10
Standard Package:
3,000
Technical Datasheet:
Available download format
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P-Channel 20 V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Texas Instruments | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 4-DSBGA (1x1) | |
| Base Product Number | CSD25213 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | NexFET™ | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V | |
| FET Feature | - | |
| Package / Case | 4-UFBGA, DSBGA | |
| Vgs (Max) | -6V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 10 V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Other Names | 296-40004-6 CSD25213W10-ND 296-40004-2 -296-40004-1-ND 296-40004-1 |
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