IPB110N20N3LFATMA1

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MOSFET N-CH 200V 88A TO263-3

NOVA Part#:

312-2283614-IPB110N20N3LFATMA1

Manufacturer:

Manufacturer Part No:

IPB110N20N3LFATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

N-Channel 200 V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB110
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™ 3
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id	4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 100 V
Power Dissipation (Max)	250W (Tc)
Other Names	SP001503864 IPB110N20N3LFATMA1DKR IPB110N20N3LFATMA1TR IPB110N20N3LFATMA1CT IPB110N20N3LFATMA1-ND