RQ3E180AJTB

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MOSFET N-CH 30V 18A/30A 8HSMT

NOVA Part#:

312-2263242-RQ3E180AJTB

Manufacturer:

Manufacturer Part No:

RQ3E180AJTB

Standard Package:

3,000

Technical Datasheet:

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N-Channel 30 V 18A (Ta), 30A (Tc) 2W (Ta), 30W (Tc) Surface Mount 8-HSMT (3.2x3)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Rohm Semiconductor
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Base Product Number	RQ3E180
Technology	MOSFET (Metal Oxide)
Series	-
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 4.5 V
FET Feature	-
Package / Case	8-PowerVDFN
Vgs (Max)	±12V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	4290 pF @ 15 V
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Other Names	RQ3E180AJTBCT RQ3E180AJTBDKR RQ3E180AJTBTR