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SIB422EDK-T1-GE3
MOSFET N-CH 20V 9A PPAK SC75-6
NOVA Part#:
312-2290061-SIB422EDK-T1-GE3
Manufacturer:
Manufacturer Part No:
SIB422EDK-T1-GE3
Standard Package:
3,000
Technical Datasheet:
Available download format
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N-Channel 20 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-75-6 | |
| Base Product Number | SIB422 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 8 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SC-75-6 | |
| Vgs (Max) | ±8V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Power Dissipation (Max) | 2.5W (Ta), 13W (Tc) | |
| Other Names | SIB422EDK-T1-GE3DKR SIB422EDKT1GE3 SIB422EDK-T1-GE3TR SIB422EDK-T1-GE3CT |
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