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BSZ0901NSIATMA1
MOSFET N-CH 30V 25A/40A TSDSON
NOVA Part#:
312-2290358-BSZ0901NSIATMA1
Manufacturer:
Manufacturer Part No:
BSZ0901NSIATMA1
Standard Package:
5,000
Technical Datasheet:
Available download format
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N-Channel 30 V 25A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8-FL | |
| Base Product Number | BSZ0901 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
| FET Feature | Schottky Diode (Body) | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V | |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | |
| Other Names | BSZ0901NSIDKR-ND SP000853566 BSZ0901NSIATMA1CT BSZ0901NSICT BSZ0901NSI BSZ0901NSIATMA1TR BSZ0901NSITR BSZ0901NSIDKR BSZ0901NSIATMA1DKR BSZ0901NSICT-ND BSZ0901NSITR-ND |
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