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P-Channel 30 V 300mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DFN1006B-3 | |
Technology | MOSFET (Metal Oxide) | |
Series | TrenchMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) | |
Rds On (Max) @ Id, Vgs | 4.1Ohm @ 200mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V | |
FET Feature | - | |
Package / Case | SC-101, SOT-883 | |
Vgs (Max) | ±8V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 30 V | |
Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 15 V | |
Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) | |
Other Names | 2156-NX3008PBKMB315 NEXNEXNX3008PBKMB,315 |
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