SUG90090E-GE3

MOSFET N-CH 200V 100A TO247AC
NOVA Part#:
312-2292257-SUG90090E-GE3
Manufacturer:
Manufacturer Part No:
SUG90090E-GE3
Standard Package:
500
Technical Datasheet:

Available download format

N-Channel 200 V 100A (Tc) 395W (Tc) Through Hole TO-247AC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247AC
Base Product Number SUG90090
TechnologyMOSFET (Metal Oxide)
SeriesThunderFET®
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 129 nC @ 10 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 100 V
Power Dissipation (Max) 395W (Tc)
Other NamesSUG90090E-GE3DKRINACTIVE
SUG90090E-GE3CTINACTIVE
SUG90090E-GE3DKR
SUG90090E-GE3TR
742-SUG90090E-GE3
SUG90090E-GE3TR-ND
SUG90090E-GE3CT
SUG90090E-GE3CT-ND
SUG90090E-GE3DKR-ND

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