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IPD65R1K0CEAUMA1
MOSFET N-CH 650V 7.2A TO252-3
NOVA Part#:
312-2301218-IPD65R1K0CEAUMA1
Manufacturer:
Manufacturer Part No:
IPD65R1K0CEAUMA1
Standard Package:
2,500
Technical Datasheet:
Available download format
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N-Channel 650 V 7.2A (Tc) 68W (Tc) Surface Mount PG-TO252-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Base Product Number | IPD65R1 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V | |
| FET Feature | Super Junction | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V | |
| Power Dissipation (Max) | 68W (Tc) | |
| Other Names | SP001421368 |
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