NTH4L060N090SC1

SILICON CARBIDE MOSFET, NCHANNEL
NOVA Part#:
312-2272545-NTH4L060N090SC1
Manufacturer:
Manufacturer Part No:
NTH4L060N090SC1
Standard Package:
450
Technical Datasheet:

Available download format

N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L

More Information
CategoryTransistors - FETs, MOSFETs - Single
Manufactureronsemi
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-4L
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 15 V
FET Feature-
Package / CaseTO-247-4
Vgs (Max)+22V, -8V
FET TypeN-Channel
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 450 V
Power Dissipation (Max) 221W (Tc)
Other Names488-NTH4L060N090SC1DKR-ND
488-NTH4L060N090SC1CT-ND
488-NTH4L060N090SC1
488-NTH4L060N090SC1TR-ND
488-NTH4L060N090SC1TR
488-NTH4L060N090SC1CT
488-NTH4L060N090SC1DKR

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