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N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-247AC
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247AC | |
Base Product Number | IRFP064 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 59A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-247-3 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 55 V | |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | |
Power Dissipation (Max) | 200W (Tc) | |
Other Names | SP001554926 *IRFP064NPBF |
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