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P-Channel 100 V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Base Product Number | SPD04P10 | |
Technology | MOSFET (Metal Oxide) | |
Series | SIPMOS® | |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 850mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 380µA | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Vgs (Max) | ±20V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V | |
Power Dissipation (Max) | 38W (Tc) | |
Other Names | SPD04P10PL G-ND SPD04P10PL GTR SPD04P10PL GDKR-ND SPD04P10PL GCT SPD04P10PL G SPD04P10PLGBTMA1TR SPD04P10PL GDKR SP000212231 SPD04P10PL GTR-ND SPD04P10PLGBTMA1DKR SPD04P10PL GCT-ND SPD04P10PLGBTMA1CT |
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