SUD09P10-195-GE3

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MOSFET P-CH 100V 8.8A TO252

NOVA Part#:

312-2294196-SUD09P10-195-GE3

Manufacturer:

Manufacturer Part No:

SUD09P10-195-GE3

Standard Package:

2,000

Technical Datasheet:

Available download format

P-Channel 100 V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Base Product Number	SUD09
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	195mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34.8 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1055 pF @ 50 V
Power Dissipation (Max)	2.5W (Ta), 32.1W (Tc)
Other Names	SUD09P10-195-GE3CT SUD09P10-195-GE3TR SUD09P10195GE3 SUD09P10-195-GE3DKR