SI2319DS-T1-E3

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MOSFET P-CH 40V 2.3A SOT23-3

NOVA Part#:

312-2281291-SI2319DS-T1-E3

Manufacturer:

Manufacturer Part No:

SI2319DS-T1-E3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 40 V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2319
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 20 V
Power Dissipation (Max)	750mW (Ta)
Other Names	SI2319DST1E3 SI2319DS-T1-E3TR SI2319DS-T1-E3DKR SI2319DS-T1-E3CT