IXTD1R4N60P 11

MOSFET N-CH 600V 1.4A DIE
NOVA Part#:
312-2339703-IXTD1R4N60P 11
Manufacturer:
Manufacturer Part No:
IXTD1R4N60P 11
Standard Package:
1

Available download format

N-Channel 600 V 1.4A (Tc) 50W (Tc) Surface Mount Die

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerIXYS
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Die
TechnologyMOSFET (Metal Oxide)
SeriesPolarHV™
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
FET Feature-
Package / CaseDie
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Other NamesIXTD1R4N60P11

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