IRFBG30PBF-BE3

MOSFET N-CH 1000V 3.1A TO220AB
NOVA Part#:
312-2297752-IRFBG30PBF-BE3
Manufacturer:
Manufacturer Part No:
IRFBG30PBF-BE3
Standard Package:
1,000

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N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number IRFBG30
TechnologyMOSFET (Metal Oxide)
Series-
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1000 V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Other Names742-IRFBG30PBF-BE3

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