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N-Channel 40 V 120A (Ta) 180W (Tc) Surface Mount DPAK+
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 175°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | DPAK+ | |
Base Product Number | TK1R4S04 | |
Technology | MOSFET (Metal Oxide) | |
Series | U-MOSIX-H | |
Current - Continuous Drain (Id) @ 25°C | 120A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 60A, 6V | |
Vgs(th) (Max) @ Id | 3V @ 500µA | |
Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 40 V | |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 10 V | |
Power Dissipation (Max) | 180W (Tc) | |
Other Names | 264-TK1R4S04PBLXHQDKR 264-TK1R4S04PBLXHQCT 264-TK1R4S04PBLXHQTR TK1R4S04PB,LXHQ(O |
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