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P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-262 | |
Base Product Number | IRF9540 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Vgs (Max) | ±20V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | |
Power Dissipation (Max) | 3.1W (Ta), 110W (Tc) | |
Other Names | SP001575378 |
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