SISS61DN-T1-GE3

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MOSFET P-CH 20V 30.9/111.9A PPAK

NOVA Part#:

312-2285622-SISS61DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SISS61DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 20 V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Base Product Number	SISS61
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen III
Current - Continuous Drain (Id) @ 25°C	30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	231 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8S
Vgs (Max)	±8V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	8740 pF @ 10 V
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Other Names	SISS61DN-T1-GE3CT SISS61DN-T1-GE3DKR SISS61DN-T1-GE3TR