SQM120P06-07L

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SQM120P06-07L_GE3

MOSFET P-CH 60V 120A TO263

NOVA Part#:

312-2283069-SQM120P06-07L_GE3

Manufacturer:

Manufacturer Part No:

SQM120P06-07L_GE3

Standard Package:

800

Technical Datasheet:

Available download format

P-Channel 60 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Base Product Number	SQM120
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	14280 pF @ 25 V
Power Dissipation (Max)	375W (Tc)
Other Names	SQM120P06-07L_GE3CT SQM120P06-07L_GE3DKR SQM120P06-07L-GE3-ND SQM120P06-07L_GE3TR SQM120P06-07L-GE3 SQM120P06-07L_GE3-ND