SI3410DV-T1-GE3

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MOSFET N-CH 30V 8A 6TSOP

NOVA Part#:

312-2282024-SI3410DV-T1-GE3

Manufacturer:

Manufacturer Part No:

SI3410DV-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 30 V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3410
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
FET Feature	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1295 pF @ 15 V
Power Dissipation (Max)	2W (Ta), 4.1W (Tc)
Other Names	SI3410DV-T1-GE3CT SI3410DV-T1-GE3TR SI3410DV-T1-GE3DKR SI3410DVT1GE3