BSP295H6327XTSA1

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

MOSFET N-CH 60V 1.8A SOT223-4

NOVA Part#:

312-2280180-BSP295H6327XTSA1

Manufacturer:

Manufacturer Part No:

BSP295H6327XTSA1

Standard Package:

1,000

Technical Datasheet:

Available download format

N-Channel 60 V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Base Product Number	BSP295
Technology	MOSFET (Metal Oxide)
Series	SIPMOS®
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
FET Feature	-
Package / Case	TO-261-4, TO-261AA
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	368 pF @ 25 V
Power Dissipation (Max)	1.8W (Ta)
Other Names	BSP295H6327XTSA1TR SP001058618 BSP295H6327XTSA1CT BSP295H6327XTSA1DKR