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N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-220
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 | |
Base Product Number | TK16E60 | |
Technology | MOSFET (Metal Oxide) | |
Series | DTMOSIV | |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 230mOhm @ 7.9A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 790µA | |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-220-3 | |
Vgs (Max) | ±30V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 600 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 300 V | |
Power Dissipation (Max) | 130W (Tc) | |
Other Names | TK16E60W5S1VX TK16E60W5,S1VX(S |
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