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P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223-4 | |
Base Product Number | BSP322 | |
Technology | MOSFET (Metal Oxide) | |
Series | SIPMOS® | |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 1V @ 380µA | |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-261-4, TO-261AA | |
Vgs (Max) | ±20V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V | |
Power Dissipation (Max) | 1.8W (Ta) | |
Other Names | SP001058784 BSP322PH6327XTSA1CT BSP322PH6327XTSA1DKR BSP322PH6327XTSA1TR |
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