IPD200N15N3GATMA1

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MOSFET N-CH 150V 50A TO252-3

NOVA Part#:

312-2283002-IPD200N15N3GATMA1

Manufacturer:

Manufacturer Part No:

IPD200N15N3GATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 150 V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Base Product Number	IPD200
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	150 V
Input Capacitance (Ciss) (Max) @ Vds	1820 pF @ 75 V
Power Dissipation (Max)	150W (Tc)
Other Names	IPD200N15N3GATMA1CT IPD200N15N3GATMA1TR IPD200N15N3GATMA1DKR SP001127820 IPD200N15N3GATMA1-ND