IRFB4227PBF

MOSFET N-CH 200V 65A TO220AB
NOVA Part#:
312-2283491-IRFB4227PBF
Manufacturer Part No:
IRFB4227PBF
Standard Package:
50
Technical Datasheet:

Available download format

N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
RoHS 1
Operating Temperature -40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number IRFB4227
TechnologyMOSFET (Metal Oxide)
SeriesHEXFET®
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Other NamesSP001565892

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