SI2333DS-T1-E3

MOSFET P-CH 12V 4.1A SOT23-3
NOVA Part#:
312-2278662-SI2333DS-T1-E3
Manufacturer:
Manufacturer Part No:
SI2333DS-T1-E3
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 12 V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SI2333
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
FET Feature-
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs (Max)±8V
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 6 V
Power Dissipation (Max) 750mW (Ta)
Other NamesSI2333DS-T1-E3TR
SI2333DST1E3
SI2333DS-T1-E3DKR
SI2333DS-T1-E3CT

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