SUP60061EL-GE3

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P-CHANNEL 80 V (D-S) MOSFET TO-2

NOVA Part#:

312-2271510-SUP60061EL-GE3

Manufacturer:

Manufacturer Part No:

SUP60061EL-GE3

Standard Package:

500

Technical Datasheet:

Available download format

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P-Channel 80 V 150A (Tc) 375W (Tc) Through Hole TO-220AB

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	218 nC @ 10 V
FET Feature	-
Package / Case	TO-220-3
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	9600 pF @ 40 V
Power Dissipation (Max)	375W (Tc)
Other Names	742-SUP60061EL-GE3