BSZ12DN20NS3GATMA1

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MOSFET N-CH 200V 11.3A 8TSDSON

NOVA Part#:

312-2280297-BSZ12DN20NS3GATMA1

Manufacturer:

Manufacturer Part No:

BSZ12DN20NS3GATMA1

Standard Package:

5,000

Technical Datasheet:

Available download format

N-Channel 200 V 11.3A (Tc) 50W (Tc) Surface Mount PG-TSDSON-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Base Product Number	BSZ12DN20
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
FET Feature	-
Package / Case	8-PowerTDFN
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
Power Dissipation (Max)	50W (Tc)
Other Names	2156-BSZ12DN20NS3GATMA1 BSZ12DN20NS3GATMA1DKR BSZ12DN20NS3GATMA1TR BSZ12DN20NS3GCT IFEINFBSZ12DN20NS3GATMA1 BSZ12DN20NS3GDKR SP000781784 BSZ12DN20NS3GATMA1CT BSZ12DN20NS3G BSZ12DN20NS3GTR BSZ12DN20NS3 G BSZ12DN20NS3GTR-ND BSZ12DN20NS3GCT-ND BSZ12DN20NS3GDKR-ND