IPN60R1K5PFD7SATMA1

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

MOSFET N-CH 650V 3.6A SOT223

NOVA Part#:

312-2297269-IPN60R1K5PFD7SATMA1

Manufacturer:

Manufacturer Part No:

IPN60R1K5PFD7SATMA1

Standard Package:

3,000

Available download format

N-Channel 650 V 3.6A (Tc) 6W (Tc) Surface Mount PG-SOT223-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-3
Base Product Number	IPN60R1
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™PFD7
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V
FET Feature	-
Package / Case	TO-261-4, TO-261AA
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	169 pF @ 400 V
Power Dissipation (Max)	6W (Tc)
Other Names	448-IPN60R1K5PFD7SATMA1CT 448-IPN60R1K5PFD7SATMA1TR 448-IPN60R1K5PFD7SATMA1DKR SP004748876