SI3443CDV-T1-GE3

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MOSFET P-CH 20V 5.97A 6TSOP

NOVA Part#:

312-2284988-SI3443CDV-T1-GE3

Manufacturer:

Manufacturer Part No:

SI3443CDV-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 20 V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3443
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 5 V
FET Feature	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Vgs (Max)	±12V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	610 pF @ 10 V
Power Dissipation (Max)	2W (Ta), 3.2W (Tc)
Other Names	SI3443CDVT1GE3 SI3443CDV-T1-GE3DKR SI3443CDV-T1-GE3CT SI3443CDV-T1-GE3-ND SI3443CDV-T1-GE3TR